Semiconductor Superlattices and Interfaces: Varenna on Lake Como, Villa Monsatero, 25 June-5 July 1991, Volume 117
This book is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and applications. The papers deal with the interaction of theory, experiments and applications within the field, and the outstanding contributions are from both the academic and industrial worlds.
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ESAKI The evolution of semiconductor quantum structures
Pattern transferadditive processing
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acoustic agreement AIAs alloy Appl applied approximation atoms band barrier bulk calculated cationic CHANG charge concentration conduction confined consider constants contribution corresponding crystal density dependence direction discussed disorder dispersion dynamical effects electric field electron energy equation excitation exciton experimental experiments fact field force frequency function GaAs given gives heterojunction holes increasing indicated intensity interface lattice layers Lett levels light mass material matrix measurements metal modes observed obtained optical parameters peaks perturbation phonon Phys Physics plane polarization position potential present properties quantum Raman range recently reflectivity region reported resonant respectively samples scattering semiconductor shift shown solid spectra strain structure superlattice surface techniques temperature theoretical theory thickness tion transitions valence band vector wave