## Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites. |

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### Contents

Contents | 1 |

Edited by T Grasser and S Selberherr September 2007 | 8 |

P Castrillo R Pinacho J E Rubio L M Vega M Jaraiz | 9 |

LA Marqués L Peiaz l Santos P Lopez M Aboy | 17 |

H Takeda T lkezawa M Kawada M Hane | 25 |

LP Huang K C Ku Y M Sheu CF Nieh CH Chen H Chang | 33 |

CA AwoAffouda MO Bloomfield TS Cale | 41 |

J Zhang W Xiong M C Tsai Y Wang Z | 49 |

Guan Y Tan J Lu L Tian Y Wang Z | 161 |

R Brunetti E Piccinini invited | 169 |

S Potbhare N Goldsman G Pennington A Akturk A Lelis | 177 |

Werber G Wachutka | 185 |

A T Pham C Jungemanri B Meinerzhagen | 193 |

Vasicek M Karner E Ungersboeck M Wagner H Kosina | 201 |

MA Pourghaderi W Magnus B Sorée M Meuris M Heyns K | 205 |

Luisier A Schenk W Fichtner | 221 |

Fiegna M Braccioli S C Brugger FM Bufler P Dolifus | 57 |

A Jaud S Barraud J SaintMartin A Bournei P Doilfus | 65 |

Z Aksamija U Ravaioli | 73 |

P Pichier invited | 81 |

S M Hong H H Park CH Park M J Lee HS Min Y J Park | 89 |

Aldegunde A J GarciaLoureiro PV Sushko A L Shiuger K Kaina | 96 |

T Herrmann W Klix R Stenzel S Duenkel R lllgen J Hoentschel | 101 |

S Yamakawa J Wang Y Tateshita K Nagano M Tsukamoto | 109 |

FM Bufler L Sponton R Gautschi | 117 |

Wang A Bryant 0 Dokumaci P Oldiges W Haensch | 125 |

T Okada A Fathurahman R Takeda H Banba H Kubota | 133 |

J Shimokawa T Enda N Aoki H Tanimoto S Ito Y Toyoshima | 141 |

Rideau E Batail S Monfray C Tavernier H Jaouen | 145 |

F Sacconi A Pecchia M Povolotskyi A Di Carlo J M Jancu | 153 |

U Aeberhard R Morf | 237 |

J Liu G Du J Cao Z Xia Y Wang R Han X | 253 |

Y Cheng I I Gamba A Majorana C W | 257 |

A Y Serov S Mv Hong Y J Park HS | 297 |

Nayfeh D A Antoniadis | 305 |

W Magnus B Soree G Pourtois S Compernolle | 321 |

T Shimada S Odanaka | 337 |

Wang K S ChangLiao C Y Lu T K Wang | 357 |

Y Li CH Hwang S M Yu H Mv Huang T C Yeh H W Cheng | 365 |

G Meller L Li S Holzer H Kosina | 373 |

R Wang J Zhuge R Huang | 381 |

H Chiang J N Lin Kv Kim CT Chuang | 389 |

R Tanabe Hv Anzai Y Ashizawa H | 397 |

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### Common terms and phrases

Abstract annealing atomistic atoms band gap band structure boron bulk calculated capacitance carbon carrier cell channel characteristics charge CMOS coefﬁcient computational concentration conduction band conﬁguration defects dependence deposition device simulation device structure dielectric diffusion distribution dopant doping drain Edited effects electric ﬁeld electron density Electron Devices electron mobility energy enhancement equation etching experimental FETs Figure ﬁlm ﬁnal FinFET ﬁrst ﬂuctuations function gate length germanium Grasser hafnium dioxide HEMTs hole IEDM Tech IEEE Trans implantation increase inﬂuence interface traps interstitial inversion layer leakage linear mechanism mesh method mobility Monte Carlo MOSFETs nanowire node obtained optimization oxide trap parameters Pauli principle phonon Phys potential proﬁle recess reduced region scattering Selberherr semiconductor September 2007 shown in Fig shows SiGe signiﬁcantly silicon simulation results strain stress subband substrate surface TCAD temperature tensile stress thermal thickness threshold voltage thyristor transistor transport tunneling velocity wafer