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REVIEW OF SEMICONDUCTOR PROPERTIES
pn JUNCTION DIODES
11 other sections not shown
13th IEEE Photovoltaic absorption antireflection coating approach atom back surface field band gap battery busbar calculate Chapter charge concentration ratio conduction band Conference Record corresponding costs crystal current density current flow Czochralski process decrease depletion region device diffusion length diode direct-band-gap dopant effect efficiency electricity electron-hole pairs electrons and holes energy storage Figure fill factor forbidden band forbidden gap GaAs grid heavily doped Hence heterojunction homojunction ideal IEEE Photovoltaic Specialists illuminated impurities increase indicated in Fig lattice light load material maximum metal minority carriers minority-carrier n-type open-circuit voltage operating optimum p-n junction parameters photon Photovoltaic Specialists Conference photovoltaic system power loss produce radiation redox Sect Section semiconductor sheet resistivity short-circuit current shown in Fig silicon cells Silicon Solar Cells solar cell Solar Energy structure substrate sunlight technique temperature thermal tion top contact unit cell valence band velocity wafers wavelength