Stress-Induced Phenomena in Metallization: Tenth International Workshop on Stress-Induced Phenomena in Metallization

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Paul S. Ho, Ehrenfried Zschech, Shinichi Ogawa
American Inst. of Physics, Jul 2, 2009 - Science - 242 pages
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Stress-induced voiding and electromigration have emerged to become key reliability problems for submicron interconnect metallization. This has led to the First International Stress Workshop on Stress-Induced Phenomena in Metallization held at Cornell University in 1991, and the series has continued to the Tenth Stress Workshop held at The University of Texas at Austin on November 5-7, 2008. This book contains the proceedings of the 10th Stress Workshop. Following the spirit of the previous workshops, this workshop emphasized new research results and advances in basic understanding on stress induced phenomena in metallization. The goal was to provide a forum for exchange of ideas, bringing into focus the technical and scientific issues and identifying needs and directions for future research. This is reflected in the papers included in the proceedings. A number of papers reported results on electromigration and stress-induced void formation in copper low k interconnects using state-of-the-art methods including in-situ transmission electron microscopy and synchrotron x-ray microdiffraction. These studies demonstrated the metrology development for studying the stress-induced phenomena in copper interconnect structure at the nanoscale. A new topic on nanostructures and future interconnects has also been included in this workshop.

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Insitu TEM Study of Electromigration in Cu Lines
Dynamical XRay Microscopy Study of StressInduced Voiding in Cu Interconnects
LargeScale Statistics for Cu Electromigration

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About the author (2009)

University of Texas

Dr Ehrenfried Zschech is manager of the Materials Analysis Department at AMD Saxony LLC & Co. KG in Dresden, Germany. Advanced Microdevices (AMD) is a global manufacturer of microprocessors and other integrated circuit-based products. AMDa (TM)s manufacturing facility in Dresden is the companya (TM)s most advanced and the site also hosts the companya (TM)s European R&D centre.

Dr Zschech was the coordinator of the IT topic of EUROMAT 2003 in Lausanne. This book, although not a proceedings, has resulted from his work for the conference. It collects contributions on materials for information technology applications from the authora (TM)s of conference papers as well as chapters from other authors in order to create a state-of-the art edited volume on the subject from the worlda (TM)s leading experts in academia and industry.

Dr Caroline Whelan is a researcher at the Interuniversity MicroElectronics Center (IMEC) Leuven, Belgium, a leading research institution in microelectronics funded by industry, government, ESA and the EU.

Dr Thomas Mikolajick is a researcher at Infineon Technologies AG, a German-based IC products manufacturers. Infineona (TM)s R&D activities cover innovations in nano technologies, photonics, high frequency circuits, mixed signal circuits, electronic biosensors, systems technology, emerging applications.

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