Thermal Management of Gallium Nitride ElectronicsMarko Tadjer, Travis Anderson Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs. - Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods - Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies - Touches on emerging, real-world applications for thermal management strategies in power electronics |
Contents
1 | |
21 | |
45 | |
Fundamental understanding of thermal transport across solid interfaces | 69 |
Upper limits to thermal conductance across gallium nitride interfaces Predictions and measurements | 83 |
AlGaNGaN HEMT device physics and electrothermal modeling | 103 |
Modeling of thermal phenomena in GaN devices | 165 |
Devicelevel modeling and simulation of AlGaNGaN HEMTs | 185 |
Fundamentals of CTEmatched QST substrate technology | 251 |
Reducedstress nanocrystalline diamond films for heat spreading in electronic devices | 275 |
GaNondiamond materials and device technology A review | 295 |
Threedimensional integration of diamond and GaN | 333 |
Roomtemperature bonded thermally conductive semiconductor interfaces | 359 |
Direct lowtemperature bonding of AlGaNGaN thin film devices onto diamond substrates | 379 |
Microfluidic cooling for GaN electronic devices | 407 |
Thermal effects in Ga2O3 rectifiers and MOSFETs borrowing from GaN | 441 |
Gate resistance thermometry An electrical thermal characterization technique | 201 |
Thermal characteristics of superlattice castellated FETs | 223 |
The transient thermoreflectance approach for highresolution temperature mapping of GaN devices | 231 |
469 | |
Back Cover | 479 |
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Thermal Management of Gallium Nitride Electronics Marko Tadjer,Travis Anderson No preview available - 2022 |
Common terms and phrases
2DEG AlGaN AlGaN/GaN HEMTs bandgap bias bonding buffer calculations channel temperature CVD diamond diamond films diamond substrate diodes drain effect electric field Electron Device Lett electron mobility electrothermal epitaxial field effect transistors function gallium nitride GaN devices GaN HEMTs GaN layer GaN-on-diamond GaN-on-Si gate grain growth heat flux heat sink heat spreading heat transfer IEEE IEEE Trans III-nitride integration interfaces J.W. Pomeroy Joule heating K.D. Hobart Kuball lattice M.J. Tadjer material measured metal methods microchannel microfluidic mobility transistors MOSFETs nanocrystalline diamond P.E. Hopkins packaging parameters phonon Phys power density power devices Raman scattering Schottky Schottky diodes self-heating semiconductor shown in Fig silicon stress structure substrate surface T.I. Feygelson T.J. Anderson TDTR technique temperature rise thermal boundary conductance thermal conductivity thermal management thermal resistance thermal transport thermography thermoreflectance thickness thin films transient voltage W/mm wafer wurtzite