Thermal Management of Gallium Nitride ElectronicsMarko Tadjer, Travis Anderson Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs.
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Contents
1 | |
21 | |
Heat transport in polycrystalline diamond from the meso to the nano scale | 45 |
Fundamental understanding of thermal transport across solid interfaces | 69 |
Upper limits to thermal conductance across gallium nitride interfaces Predictions and measurements | 83 |
AlGaNGaN HEMT device physics and electrothermal modeling | 103 |
Modeling of thermal phenomena in GaN devices | 165 |
Devicelevel modeling and simulation of AlGaNGaN HEMTs | 185 |
Fundamentals of CTEmatched QST substrate technology | 251 |
Reducedstress nanocrystalline diamond films for heat spreading in electronic devices | 275 |
GaNondiamond materials and device technology A review | 295 |
Threedimensional integration of diamond and GaN | 333 |
Roomtemperature bonded thermally conductive semiconductor interfaces | 359 |
Direct lowtemperature bonding of AlGaNGaN thin film devices onto diamond substrates | 379 |
Microfluidic cooling for GaN electronic devices | 407 |
Thermal effects in Ga2O3 rectifiers and MOSFETs borrowing from GaN | 441 |
Gate resistance thermometry An electrical thermal characterization technique | 201 |
Thermal characteristics of superlattice castellated FETs | 223 |
The transient thermoreflectance approach for highresolution temperature mapping of GaN devices | 231 |
469 | |
Back Cover | 479 |
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Thermal Management of Gallium Nitride Electronics Marko Tadjer,Travis Anderson No preview available - 2022 |