GB/T 12963-2009 Translated English of Chinese Standard. (GBT 12963-2009, GB/T12963-2009, GBT12963-2009): Specification for polycrystalline silicon [Buy--download True-PDF in 3-second: https://play.google.com/books > Sign in > This BOOK > "3-dots" > Export > Save as "*.pdf"]https://www.chinesestandard.net, 2015 M10 5 - 9 pages This Standard specifies the product classification, technical requirements, test methods, inspection rules, mark, transportation as well as storage for the polycrystalline silicon. The polycrystalline silicon, which is manufactured from trichlorosilane or silicon tetrachloride by hydrogen reduction method, is applicable to this Standard. |
Common terms and phrases
ASTM batch of product block-shaped polycrystalline silicon boron resistivity boron-doped and phosphorus-doped carried out according club-shaped polycrystalline silicon collection and sample Committee for Semiconductor concentration of carbon conduction types content conversion between resistivity corrosion density for boron-doped diameter dimension distribution range dimension in range document is applicable dopant density Electricity Parameters Equipment and Materials Examination method grade of polycrystalline inspection of polycrystalline inspection result Inspection Rules item latest edition Mark measurement minority carrier lifetime n-type minority carrier National Standardization Technical negotiated Normative Number oxide lamella packing box phosphine resistivity phosphorus-doped silicon polyethylene packaging Practice for conversion Product classification Product Quality purity Q.cm range of block-shaped reference represents requirements of GB/T resistivity and boron resistivity and dopant resistivity inspection sample collection sample preparation section Semiconductor Equipment Semiconductor Material shape Specification for Polycrystalline Standardization Technical Committee Storage structure supplier and purchaser surface quality Technical requirements Terms Test method unqualified weight Zone-melting