 Stacking fault generation may relax this disregistry and relieve the associated large localized strains at the boundaries. The difference between 6H (1 100) and 4H (1 100) is the width of microsurfaces; narrower microsurfaces on 4H (1100).  Crystal and Epitaxial Growth - Page 165edited by - 2002Full view - About this book
 | Zhe Chuan Feng - Science - 2004 - 480 pages
...microfacet, it brings about regions of disregistry at the microfacet boundaries. Stacking fault formation may relax this disregistry and relieve the associated...boundaries. The difference between 6H (1 100) and 4H (1 TOO) is the width of microfacets, narrower microfacets on 4H ( 1 100) . This causes a large difference... | |
 | Wolfgang J. Choyke, Hiroyuki Matsunami, Gerhard Pensl - Technology & Engineering - 2003 - 938 pages
...microfacet, it brings about regions of disregistry at the microfacet boundaries. Stacking fault formation may relax this disregistry and relieve the associated...strains at the boundaries. The difference between 6H (1100) and 4H (1100) is the width of microfacets; narrower microfacets on 4H (1100). This causes a... | |
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