Crystal and Epitaxial Growth, Volume 2

Front Cover
V. Alexander Stefan, Editor, E. V. Zharikov, Editor
Stefan University Press, 2002 - Science
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Contents

IV
1
V
29
VI
93
VII
107
VIII
141
IX
151
X
171
XI
195
XIII
219
XIV
223
XV
225
XVI
229
XVII
233
XIX
237
XX
241
Copyright

XII
215

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Page 101 - It is better, on this account, in graduating the bottle, to make two scratches as represented in the drawing, one at the top and the other at the bottom of the curve : this prevents any future mistake.
Page 160 - An important aspect of micropipes is that while they are forming during growth, simultaneous processes also occur which reduce their concentration, such as dissociation, coalescence, recombination and transformation [3].
Page 171 - HM Hobgood, DL Barrett, JP McHugh, RC Clarke, S. Sriram, AA Burk, J. Greggi CD Brandt, RH Hopkins, and WJ Choyke, J. Cryst. Growth 137, 181 (1994).
Page 164 - ... methodology for expanding the single crystal area without degrading crystal quality. The difficulty in growing high-quality crystals rapidly increases as the crystal diameter increases, and various technological problems have become apparent in the diameter enlargement process. To avoid these problems, a high degree of control of both the transient and continuous thermal profiles during growth is required. However, experimental optimization of such growth parameters usually takes much effort...
Page 160 - The fact that micropipes appear stable and propagate in the crystal implies that there exists a large kinetic energy barrier to nucleate a dislocation in SiC crystals adjacent to micropipes. This kinetic barrier may be reduced by optimizing the growth conditions, and micropipes are dissociated.
Page 169 - Figure 8a illustrates the atomic configuration of the 6H( 1 100) surface seen from the [1 120] direction. The 6H(1 100) surface is assumed to comprise (1 102) and (1 102) microsurfaces of three Si-C bilayers, which are alternately arranged in the <0001> direction. As seen in the figure, the ( 1 102) and ( 1 102) microsurfaces have bond configurations identical to (0001)C and (OOOl)Si, respectively.
Page 172 - D. Hofmann, R. Eckstein, M. Kolbl, Y. Makarov, St.G. Muller, E. Schmitt, A. Winnacker, R. Rupp, R. Stein, J. Volkl: J.
Page 169 - Stacking fault generation may relax this disregistry and relieve the associated large localized strains at the boundaries. The difference between 6H (1 100) and 4H (1 100) is the width of microsurfaces; narrower microsurfaces on 4H (1100).
Page 161 - SiC devices are still largely hindered by the presence of crystallographic defects other than micropipes. in particular, low angle grain boundaries (subgrain boundaries) are another critical defect which prevents the implementation of large-size (>lcm2) SiC devices.

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