Gallium Arsenide and Related Compounds, 1974: Papers from the Fifth International Symposium on Gallium Arsenide and Related Compounds Held in Deauville, 24-26 September 1974
Institute of Physics, 1975 - Gallium - 378 pages
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active Appl band bias boat breakdown calculated carrier concentration characteristics compared composition conduction constant crystals curve decrease degradation dependence depletion depth described determined device diffusion diffusion length diodes discussed dislocation distribution donor doping effect efficiency electrical electron emission energy epitaxial layer etching experimental experiments field flow frequency GaAs gallium arsenide grown growth heat higher hole implanted impurity increase indicate interface junction laser lattice parameter Lett light limited lines liquid lower material measurements melt metal method mobility n-type observed obtained operating oxygen performance phase Phys plot present pressure range region reported resistance reverse samples Schottky barrier shown in figure shows silicon similar solid solution structure substrate surface technique temperature thickness typical variation voltage wafer wavelength