Proceedings of the ... European Conference on Chemical Vapor DepositionEditions de physique, 1989 - Vapor-plating |
Contents
A CHESTERS The application of infrared spectroscopy to the detec | 1 |
B CROS M STOEHR M MAURIN A MATHIEU J M FABRE et L GIRAL | 14 |
VINANTE P DUVERNEUIL and J P COUDERC A two dimensional model | 35 |
37 other sections not shown
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Common terms and phrases
acetone amorphous Appl atomic boron BSCCO calculated carbide carbon carrier gas ceramic chemical vapor deposition coating Colloque C5 composition concentration Conf couches crystal decomposition density deposition process deposition rate deposition temperature dépôt diamond diffraction diffusion Electrochem electron energy epitaxial experimental fiber Figure films deposited flow rate gas phase gazeuse grain growth rate H₂ heteroepitaxial hydrogen increase interface kinetics laser power layer LPCVD materials mbar mechanism metal microstructure microwave plasma mixture molecules morphology MOVPE nucleation obtained obtenus optical oxide oxygen parameters partial pressure PECVD Phys plasma polysilicon pore Proc profiles properties ratio reactant réacteur reaction reactor sample sccm semiconductor SiH4 silane silicide silicium silicon films silicon nitride SiO2 solid species structure substrate substrate temperature supplément au n°5 surface susceptor technique TEOS thermal thermodynamic thin films titanium titanium carbide Torr total pressure values wafer X-ray X-ray diffraction YBCO zone