Physics and Technology of Submicron Structures: Proceedings of the Fifth International Winter School, Mauterndorf, Austria, February 22–26, 1988This volume presents a discussion of the latest results in the physics of low-dimensional structures. At the winter school major breakthroughs were reported, and some of the excitement of the participants is reflected in the contributions. The topics treated range from the fabrication of microstructures and the physical background of future semiconductor devices to vertical transport in nanostructures, universal conductance fluctuations, and the transition from two-dimensional to one-dimensional conduction in semiconductor structures. |
Contents
Quantum Wires | 2 |
Electron Beam Lithography and Dry Etching Techniques for | 14 |
ElectronBeam Lithography of UltraSubmicron Devices | 37 |
Copyright | |
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2DEG AlGaAs amplitude Appl approximately average ballistic band bistability calculated channel conductance fluctuations CoSi2 curves density dependence device diffusion dimensional disorder distribution electron beam electron beam lithography epitaxial etching exciton experimental fabricated Fermi energy function GaAlAs GaAs gate voltage Heinrich G heterostructure hopping implantation impurity inelastic InGaAs interdiffusion interface Kuchar Landau levels layer length Lett lithography localisation loop magnetic field magnetoresistance Mankiewich mask mean free path measured metal microstructures modulation MOSFET observed obtained optical oscillations pattern peak phase coherence phonon photoluminescence Phys potential properties quantized quantum interference quantum wires R. E. Howard R.A. Webb ratio regime region resistance resonant tunneling RTB structures sample scattering screening semiconductor Series in Solid-State shown in Fig shows spectra Springer Series Structures Editors subband superlattice surface Technology of Submicron temperature theory thickness transistor transport undoped voltage probes weak localization width zero