Effects of Hot-carrier Phenomena on Performance of MESFET's |
Contents
A Survey of FieldEffect Transistors | 2 |
B Survey of Advanced Theoretical | 5 |
Twodimensional numerical | 9 |
Copyright | |
7 other sections not shown
Common terms and phrases
2-D analysis 2-D MESFET active layer analyzed anisotropic analysis Baechtold calculated capacitance carrier accumulation carrier concentration versus cm/sec continuity Equation convergence criteria current continuity current density depletion region dipole layer distribution and potential Drain characteristics drain conductance drain current drain end drain voltage drift velocity electric field experimental FFT and SOR field-dependent figures of merit GaAs and InP GaAs device GaAs FET GaAs InP gate MESFET's model gradual channel half-micron-gate MESFET's model InP devices InP FET InP MESFET InP MESFET model isotropic kV/cm Lehovec longitudinal velocity profiles MESFET's model C.1 Mobile carrier concentration mobile carrier density Mobile carrier distributions model C.2 modulation numerical numerical analysis obtained one-micron-gate MESFET's model p-n junction Parameters for model pinch-off Poisson solver Poisson's equation potential contour Source Gate Drain substrate tensor diffusivity transconductance v-E curve velocity saturation velocity-field curve VG-OV μη ον