1998 IEEE Semiconducting and Insulating Materials Conference
Zuzanna Liliental-Weber, Carla J. Miner, Institute of Electrical and Electronics Engineers
IEEE, 1999 - Technology & Engineering - 346 pages
Contributors to this proceedings volume discuss: growth, characterization, theory, device applications and material issues of the III-V semiconductors which can be rendered insulating by special procedures or treatments, and of other promising compound materials such as SiGe, SiC and GaNA1N.
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High Pressure Solution Growth and Physical Properties of GaN Crystals
Growth of GaN and AlGaN by High Temperature Vapor Phase Epitaxy
High Resolution EL2 and Resistivity Topography of SI GaAs Wafers
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absorption acceptor activation annealing Appl applications as-grown Asga atoms band barrier bulk calculated changes channel characteristics charge compared compensation concentration conduction contrast corresponding crystal curves decrease deep defects density dependence detector determined devices diffusion discussed dislocations distribution donor doped effect electrical electron emission energy epitaxial experimental experiments field Figure formation formed GaAs grown growth higher implantation increase indicates intensity interface irradiation laser lattice layer Lett lifetime light lines lower LT-GaAs material measured mechanism method mobility observed obtained optical oxidation parameters peak performed Phys precipitates present pressure properties quantum range ratio References region relaxation reported Research resistivity respectively samples semi-insulating semiconductor shown shows similar spectra strain structure substrate surface Table technique temperature thermal thickness traps undoped University vacancies voltage wafers X-ray