Advances in Silicon Carbide Processing and Applications

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Artech House, 2004 - Science - 212 pages
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Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
 

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Contents

Silicon Carbide Overview
1
111 Mechanical and Chemical Properties
2
114 Saturated Drift Velocity
3
116 Figures of Merit
4
122 The Discovery of Polytypism
6
124 The Lost Decades
7
13 Crystalline Structure
8
133 Impurities in Different Polytypes
9
314 SiC ACDC Inverter Example
79
32 DCAC Power Conversion
80
322 Inverter Control Techniques
81
323 SiC DCAC Inverter Example
82
33 PulsedPower Applications
91
331 Thyristor Basics
92
332 Evaluation of SiC Thyristors for PulsedPower Switching
94
34 Thermal Management and HighVoltage Packaging
97

14 Crystal Growth
11
142 High Temperature Chemical Vapor Deposition
14
15 Epitaxial Growth
18
16 Defects
21
162 Stacking Faults
22
171 HighFrequency Applications
23
18 Summary
25
References
26
HighTemperature SiCFET Chemical Gas Sensors
29
22 Detection Mechanism of FieldEffect Gas Sensors
30
222 Detection of Different Molecules
31
223 Influence of Oxygen
34
224 Influence of Different Metals
35
225 Influence of Temperature
36
23 FieldEffect Chemical Gas Sensor Devices
38
233 The PN Junction Diode
43
234 FieldEffect Transistors
44
24 Sensor Properties at Elevated Temperatures Influence of Hydrogen
49
241 Influence of Hydrogen on Capacitors
50
242 Influence of Hydrogen on Schottky Diodes
51
25 More Sensor Properties
53
252 LongTerm Stability
56
26 Experimental
57
263 Mounting
58
27 Applications
59
272 Diesel Engine Exhausts
60
273 Flue Gas Monitoring
61
28 Outlook and Conclusions
62
Acknowledgments
63
Silicon Carbide Technology and Power Electronics Applications
69
311 SMPC Circuit Topologies and Operation
70
312 Silicon Carbide Devices in SMPC Applications
73
313 Other SiC Switches
78
341 Hybrid SiSiC HalfBridge Module
98
342 Implementation Analysis of a HighVoltage SiC Bridge Rectifier Module
100
343 Electrostatic Analysis of a HighVoltage Package for SiC Devices
103
35 Summary
106
Advances in Selective Doping of SiC Via Ion Implantation
109
42 AsImplanted Profiles
114
422 Random Implants
115
4223 Chemical Depth Profiles
124
43 Implant Annealing
128
432 Silane Overpressure Annealing Process
130
433 Implanted Ion Profiles After Annealing
136
434 Defect Evolution
140
435 Results of Electrical Activation
143
44 Technology Barriers and Suggestions for Future Work
147
References
148
Power SiC MOSFETS
155
52 SiC UMOSFET
156
53 SiC DIMOSFET
163
54 SiC LDMOS
169
55 Summary and Future Development
171
References
172
Power and RF BJTs in 4HSiC Device Design and Technology
177
63 Design of the Epitaxial Power BJT
181
632 Design of the Base Layer
183
633 Design of the Unit Cell
184
64 Process Integration
186
65 12kV Power BJTs
188
66 Design and Fabrication of UHF Transistors
192
67 Future Work
199
References
200
About the Editors
203
Index
205
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