Optical/laser Microlithography, Volume 5, Part 2SPIE-the International Society for Optical Engineering, 1992 - Lasers |
Contents
Process solutions for the global proximity effect on submicron lithography 167412 | 12 |
Systematic design of phaseshifting masks with extended depth of focus andor shifted focus | 14 |
DeepUV lithography for prototype 64megabit DRAM fabrication 167425 | 25 |
Copyright | |
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Common terms and phrases
aerial image algorithm alignment accuracy alignment marks ARCOR ARCOR film ARCOR process ARCOR-2 best focus bias CD(um Chromium coating condenser tilt contact hole contour conventional mask cost function CQUEST defocus depth of focus designed mask diffraction DRAM entrance pupil etch experimental exposure focal plane focus latitude focus positions focus shift i-line stepper image contrast image monitor image shift k₁ laser layer layout lens lines and spaces mask in Figure mask pattern measured Microlithography micron minimum numerical aperture optical lithography optical planes parameters partial coherence pattern B pattern peak intensity periphery pattern phase connector phase-shifting mask photolithography photoresist point spread function proximity effect reduced refractive index resist film resist thickness resolution shift mask shifter shown in Figure shows simulation spatial Spectralith SPIE Strehl ratio substrate swing curve technique thin film interference topography transmission mask wafer wavelength