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Fundamental Principles Related to
The Physics of Semiconductor Materials
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analysis applied approach associated basic Body Potential breakdown calculated capacitance coefficients capacitors caused characteristics circuit CMOS conduction conductor damage degradation density dependent described detected determine developed device dielectric difference discussed dissipated effect electric field electronic Electrostatic Discharge energy EOS/ESD Symp equal equations equipment ESD test et al example experimental factor failure Floating function gate geometry given ground plane human body IEEE included increase INDUCTION CHARGING initial injection input insulating integrated circuits interface isolated LARGE materials measurement mechanisms metal method NORMALIZED occurs oxide performed Phys potential difference presented probe Proc protection pulse radius reliability resistance reviewed sensitivity separation showed shown in Figure simulator SINK sphere Standard stress structures studied surface technique threshold transient transistors trapping typical versus voltage waveform