Optical Microlithography V: 13-14 March 1986, Santa Clara, CaliforniaHarry L. Stover SPIE--the International Society for Optical Engineering, 1986 - Technology & Engineering - 309 pages |
Contents
SUBMICRON IMAGING | 5 |
ACHIEVING RESOLUTION | 33 |
SESSION 2A IMPROVING PATTERN OVERLAY I | 59 |
Copyright | |
7 other sections not shown
Common terms and phrases
adjustment aerial image alignment marks alignment system best focus chrome contour contrast curve DAGGER defect DEFOCUS depth of focus developed device diffraction e-beam effects equipment etching evaluation excimer laser exposure dose exposure field feature focal focus setting function g-line i-line illumination image field improved inspection intensity laser stage layer lenses lines and spaces linewidth magnification mask edge measured Microlithography micron microscope modulation NORMALISED numerical aperture optical lithography Optical Microlithography optical system overlay accuracy parameters partial coherence performance photolithography photomask photoresist plane plot polysilicon position pressure printability production projection lens proximity effects Rasterizer Engine RAYLEIGH UNITS reduction lens resist process resist profile reticle rotation sample SAN DIEGO scanning Semiconductor sensitivity shows sigma simulation spacewidth spatial filter SPIE step step and repeat structures submicron substrate surface technique Technology telecentricity throughput variation vernier vibration wafer mark wafer stepper wavelength width