Ultraclean Semiconductor Processing Technology and Surface Chemical Cleaning and Passivation: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Michael Liehr Wafer cleaning, microcontamination and surface passivation are the key focus of this proceedings volume, the 3rd in a successful series from MRS. It is a field in which control of surface chemistry and surface morphology, as well as particle and molecular contamination removal, are of critical importance. This volume expands the scope of the topic to include ultraclean technology in a broader sense, emphasizing the identification and characterization of trace contamination, strategies for removal, and equipment considerations, as well as critical limits for impact on devices. Novel processes, such as chemical mechanical polishing (CMP), and their ramifications for contamination removal are also addressed. |
Contents
Recent Advances in Wet Processing Technology | 3 |
Studies of the Relationship Between Megasonics Surface | 13 |
A Study of Cleaning Performance and Mechanisms | 21 |
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1995 Materials Research acid adsorption analysis annealing Appl atomic atoms/cm² Binding Energy breakdown capacitors carbon chamber chemistry cleaning process contact angle density deposition desorption detection limit device dielectric dilute diodes effect Electrochem electron epitaxial etch rate etchants exposure Figure films flow fluorine gate oxide H-plasma H-terminated HF solution hydrogen hydrophobic increase interface layer Materials Research Society measurements metallic contamination metallic impurities MV/cm native oxide NH4OH nitride observed oxide surface oxygen parameters passivation peak phototransistor Phys plasma cleaning polishing Proc ratio RCA clean reduced rinse sample SC1 solution Semiconductor shown in Fig shows silicidation silicon nitride silicon surface silicon wafers SiO2 slurry spectra spectroscopy sputtering substrate surface charge surface concentration surface roughness surfactant Symp technique Technology temperature thermal oxide treatment valence band values voltage wafer cleaning wafer surface X-ray photoelectron spectroscopy