Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications

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John Wiley & Sons, Sep 23, 2014 - Technology & Engineering - 552 pages

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications

Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are:

  • A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques.
  • Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors.
  • A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources.
  • Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors.
  • Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development.

This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

 

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Contents

Contents
301
Bipolar Power Switching Devices
353
Contents ix
417
Applications of Silicon Carbide Devices in Power Systems
445
Specialized Silicon Carbide Devices and Applications
487
Appendix A Incomplete Dopant Ionization in 4HSiC
511
Appendix B Properties of the Hyperbolic Functions
517
Contents
521
Index 525
xi
Contents
vii
Epitaxial Growth of Silicon Carbide
75
Characterization Techniques and Defects in Silicon Carbide
125
Device Processing of Silicon Carbide 189
186
Copyright

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About the author (2014)

Tsunenobu Kimoto, Department of Electronic Science and Engineering, Kyoto University, Japan.
Professor Kimoto has been involved in SiC research for more than 20 years and his research activity in this field covers growth, optical and electrical characterization, device processing, device design and fabrication. He has published more than 300 papers in international journals and has presented more than 50 invited talks at international conferences. He was a guest editor of the 2008 SiC special issues of IEEE Transactions on Electron Devices.

James A Cooper, School of Electrical and Computer Engineering, Purdue University, Indiana, USA
Professor Cooper was a member of technical staff at Bell Laboratories for ten years where he was principal designer of AT&T’s first microprocessor and investigated nonlinear transport in silicon inversion layers. His research at Purdue has centered on semiconductor device physics and characterization, focusing primarily on III-V materials and silicon carbide. He has co-authored over 250 technical papers and conference presentations.

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