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Dynamical Stark effect in small quantum dots 393304
Analysis of laser ablation process in semiconductor due to ultrashortpulsed laser with
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absorption angle annealing Appl applications atoms band bending calculated corresponding crystal damage decreases defects density dependence deposition depth devices diameter diode laser direction distribution effect electric electron emission energy excimer laser experimental experiments fabrication fiber field Figure fluence formation formed function grown growth heat higher hole hydrogen increase intensity irradiation laser ablation laser beam laser fluence laser irradiation laser pulse layer light manufacturing material measured mechanism metal method Microelectronic nitrogen observed obtained optical oxide parameters particles pattern peak performed Phys plasma positive possible presented pressure produced properties pulse radiation Raman Raman spectroscopy region removal respectively sample scanning semiconductor SHEW shown shows signal silicon single spectra stress structure substrate surface technique temperature thermal thickness thin films threshold transfer wafer wavelength width