Design and fabrication of monolithic broadband microwave GaAs low noise FET amplifiers |
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Contents
CHAPTER TITLE PAGE | xii |
CHAPTER TITLE PAGE | 1 |
DESIGN CONSIDERATIONS OF MONOLITHIC | 5 |
11 other sections not shown
Common terms and phrases
3008 GaAs MESFET airbridge aligner amplifier design APPLICON CAD check-plot associated gain bias conditions BIAS TEE capacitance Chapter circuitry configuration contact lithography Cornell 3008 GaAs device dielectric distributed elements equivalent circuit equivalent noise resistance etch fabrication film GaAs substrate gain and noise gallium arsenide gate length gate line gate metallization gate recess gate resistance GHz low-noise ground plane implanted inductance inductor input and output integrated circuits interdigitated Lange coupler Karl Suss Lange coupler layer low noise GaAs low-noise amplifier low-noise FET amplifier matching network mesa micrograph microns microstrip line microwave integrated circuits mid-UV minimum noise figure MMIC MMIC's noise amplifier noise measure noise parameters ohmic contact ohms optimal noise source overlay capacitor pattern Photograph photolithography photoresist power gain reflection coefficient resistor rH rH S-parameters Schottky shown in Figure single-ended source impedance source resistance synthesized technique test fixture thickness transconductance tuner two-port voltage
Bibliographic information
| Title | Design and fabrication of monolithic broadband microwave GaAs low noise FET amplifiers |
| Author | Thomas Chen-Chou Ho |
| Publisher | Cornell University, Jan., 1985 |
| Original from | Cornell University |
| Digitized | Nov 24, 2010 |
| Length | 536 pages |
| Subjects | › › Field-effect transistors Gallium arsenide semiconductors Technology & Engineering / Electronics / Semiconductors Technology & Engineering / Electronics / Transistors |
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