Gallium Arsenide and Related Compounds: Proceedings of the Third International Symposium Organized by the Rheinisch-Westfählische Technische Hochschule Aachen and Sponsored by the British Institute of Physics and the Avionics Laboratory of the United States Air Force Held at Aachen, Germany, October, 1970
Institute of Physics, 1971 - Gallium arsenide - 297 pages
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MB Panish and M Ilegems
F E Rosztoczy G A Antypas and C y Casau
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acceptor active alloy appl applied approximately atoms band bandgap beam calculated carrier concentration characteristics coefficient composition conduction constant crystals curves density dependence described determined devices diffusion diodes distribution domain donor doping effect efficiency electrical electron emission energy epitaxial epitaxial layers et al etch experimental field frequency function GaAs gallium arsenide gate grown growth growth rate heat higher hydrogen impurity increase indicated ionization layers length less limited lower material maximum measurements melt metal method mobility mode n-type observed obtained operation oscillators peak Phys possible present Proc produce properties pulse range ratio reduced region reported resistance sample saturation Schottky barrier semiconductor shown in figure shows silicon Solid solution structure substrate surface technique temperature thermal thickness threshold transition values vapour variation voltage yield