Optical/laser Microlithography, Volume 5, Part 2SPIE-the International Society for Optical Engineering, 1992 - Lasers |
Contents
SESSION 8A POSTER SESSION | 411 |
Systematic design of phaseshifting masks with extended depth of focus andor shifted focus | 423 |
simplification delivers performance 167434 | 435 |
Copyright | |
29 other sections not shown
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Common terms and phrases
absorption aerial image alignment angle annular illumination Aquatar beam calculated coherence contrast conventional mask curve deep UV defocus depth of focus design rules device diffraction DRAM edge electron energy equation error etch excimer laser experimental exposure dose exposure latitude field film thickness Fomblin g-line i-line stepper improved latent image layer lens line and space linewidth manufacturing marker measured method Microlithography micron module Nikon numerical aperture obtained ODOF optical lithography optimal overlay parameters pattern performance phase mask phase shift mask photolithography photomask photoresist position process window production proximity correction proximity effect pulse radiation reduced reflectivity refractive index resist thickness resolution limit reticle shifter shown in Figure shows SHRINC silicon silylation simulation slope SPIE spin coated substrate technique topography Ultratech wafer wafer stage wave wavelength wavelength stability width x-ray X-ray lithography