Physics and Technology of High-k Gate Dielectrics II: Proceedings of the Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues : Held in Orlando, Florida, October 12-16, 2003, Volume 2003

Front Cover
Samares Kar
The Electrochemical Society, 2004 - Dielectrics - 490 pages
"This volume is the proceedings of The Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues ... and was held during [the] 204th Meeting [of the Electrochemical Society] ..."--P. v.
 

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Page 215 - Microelectronics Research Center Department of Electrical and Computer Engineering The University of Texas at Austin, Austin...
Page 305 - GD Wilk, RM Wallace, and JM Anthony, J. Appl. Phys., 89. 5243, (2001).
Page 394 - CH Lee, HF Luan, WP Bai, SJ Lee, TS Jeon, Y. Senzaki, D. Roberts, and DL Kwong, "MOS characteristics of ultra thin rapid thermal CVD ZrO2 and Zr silicate gate dielectrics,
Page 257 - ALP Rotondaro, MR Visokay, JJ Chambers, A. Shanware, R. Khamankar. H. Bu, RT Laaksonen, L. Tsung, M. Douglas, R. Kuan, MJ Bevan, T. Grider, J. McPherson and L. Colombo, "Advanced CMOS transistors with a novel HfSiON gate dielectric," 2002 Symposium on VLSI Technology.
Page 98 - J. Kwo, M. Hong, AR Kortan, KL Queeney, YJ Chabal, RL Opila, Jr., DA Muller, SNG Chu, BJ Sapjeta, TS Lay, JP Mannaerts, T.Boone, HW Krautter, JJ Krajewski, AM Sergent, and JM Rosamilia, J.
Page iii - Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark. NJ 07102. USA GRAHAM C GOODWIN Department of Electrical and Computer Engineering University of Newcastle New South Wales.
Page 111 - S. Van Elshocht, M. Caymax, S. De Gendt, T. Conard, J. Petry, et al., presented at Symp.
Page 374 - An important issue is that of the equilibrium frequency in strong accumulation. Assuming a capture cross-section of 10-15 cm2 and a minimum majority carrier density of 1017 cm-3 at the interface, the interface trap time constant becomes 1 ns or less in strong accumulation. Hence, a 100 kHz or 1 MHz accumulation capacitance can be considered to be equilibrium capacitance. RESULTS AND DISCUSSION The proposed technique...
Page 4 - Each silicon atom is surrounded by four oxygen atoms and each oxygen atom is bonded to two silicon atoms.
Page 417 - References 1. T. Kobayashi, IEICE Trans. Fundam. E-75A, 38 (1992). 2. M. Yoshizawa, Y. Hattori, and T. Kobayashi, Phys. Rev. B 47, 3882 (1993). 3. AJ Heeger, S. Kivelson, JR Schrieffer, and WP Su, Rev. Mod. Phys. 60, 781 (1988). 4. WP Su, JR Schrieffer...

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