Physics and Technology of High-k Gate Dielectrics II: Proceedings of the Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues : Held in Orlando, Florida, October 12-16, 2003, Volume 2003
The Electrochemical Society, 2004 - Dielectrics - 490 pages
"This volume is the proceedings of The Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues ... and was held during [the] 204th Meeting [of the Electrochemical Society] ..."--P. v.
What people are saying - Write a review
We haven't found any reviews in the usual places.
Al2O3 films annealing temperature Appl as-deposited atomic layer deposition atoms barrier C-V curves capacitance capacitor CeO2 charge chemical cleaning conduction band decrease dielectric breakdown dielectric constant effect electrical Electron Devices ellipsometry equivalent oxide thickness etch rate experimental Figure films deposited function gate electrode gate leakage gate stacks gate voltage growth temperature HfD2 HfO2 HfO2 films HfSiO high-k dielectric high-k gate dielectrics high-k layer higher hysteresis IEEE implantation increase interface interfacial layer leakage current density Lett measured metal mobility MOCVD MOS capacitors nitrogen nitrogen flow rate nMOSFET noise oxygen peak PEALD Al2O3 phase Phys plasma plot poly-Si polysilicon precursor PSrT film ruthenium samples shown in Fig shows silicate silicidation silicon nitride SiO2 SiO2 films spectra sputtering substrate temperature surface TaNx Technology thermal oxide thin films Torr transistors TXRF valence band VFB shift wafers X-ray ZrO2
Page 215 - Microelectronics Research Center Department of Electrical and Computer Engineering The University of Texas at Austin, Austin...
Page 394 - CH Lee, HF Luan, WP Bai, SJ Lee, TS Jeon, Y. Senzaki, D. Roberts, and DL Kwong, "MOS characteristics of ultra thin rapid thermal CVD ZrO2 and Zr silicate gate dielectrics,
Page 257 - ALP Rotondaro, MR Visokay, JJ Chambers, A. Shanware, R. Khamankar. H. Bu, RT Laaksonen, L. Tsung, M. Douglas, R. Kuan, MJ Bevan, T. Grider, J. McPherson and L. Colombo, "Advanced CMOS transistors with a novel HfSiON gate dielectric," 2002 Symposium on VLSI Technology.
Page 98 - J. Kwo, M. Hong, AR Kortan, KL Queeney, YJ Chabal, RL Opila, Jr., DA Muller, SNG Chu, BJ Sapjeta, TS Lay, JP Mannaerts, T.Boone, HW Krautter, JJ Krajewski, AM Sergent, and JM Rosamilia, J.
Page iii - Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark. NJ 07102. USA GRAHAM C GOODWIN Department of Electrical and Computer Engineering University of Newcastle New South Wales.
Page 111 - S. Van Elshocht, M. Caymax, S. De Gendt, T. Conard, J. Petry, et al., presented at Symp.
Page 374 - An important issue is that of the equilibrium frequency in strong accumulation. Assuming a capture cross-section of 10-15 cm2 and a minimum majority carrier density of 1017 cm-3 at the interface, the interface trap time constant becomes 1 ns or less in strong accumulation. Hence, a 100 kHz or 1 MHz accumulation capacitance can be considered to be equilibrium capacitance. RESULTS AND DISCUSSION The proposed technique...
Page 4 - Each silicon atom is surrounded by four oxygen atoms and each oxygen atom is bonded to two silicon atoms.
Page 417 - References 1. T. Kobayashi, IEICE Trans. Fundam. E-75A, 38 (1992). 2. M. Yoshizawa, Y. Hattori, and T. Kobayashi, Phys. Rev. B 47, 3882 (1993). 3. AJ Heeger, S. Kivelson, JR Schrieffer, and WP Su, Rev. Mod. Phys. 60, 781 (1988). 4. WP Su, JR Schrieffer...