Fabrication of Photovoltaic Laser Energy Converterby MBE1993 - 62 pages |
Common terms and phrases
achieve annealing atoms atoms/cc beam boron chamber channel charge Clean coating composition concentration connected in series contamination controlled converter cooled CoSi2 film CoSi2 layers crystallinity depositing designed developed device diodes dopant doping double p-n junction e-beam source effusion sources energy epitaxy established etching evaporation fabricated flux follows grown growth chamber growth process growth rate heating high-quality high-temperature holder I-V curve in-situ incident increased interconnection interdiffusion interface laser laser beam laser-energy lattice low growth temperature material MBE growth MBE-grown measured micron minutes mismatch multiple p-n junctions nitrogen optimized p-n junctions connected p-type position probe produced prolonged growth range ratio recombination reduce reflectivity REPORT respectively result sample series resistance showed shown in Fig silicide SIMS single SPE-CoSi2 spectrum stack structure surface thickness thin transfer typical vertical junctions voltage wafer yield