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achieve annealing atoms/cm3 blow dry boron carrier concentration connected by CoSi2 connected in series conventional effusion CoSi2 film CoSi2 layers CoSix cross contamination curve tracer DEPTH microns depth profile developed device diodes dopant doped Si films doping concentration doping profile double p-n junction e-beam source effusion cell effusion sources epitaxial layers etching fabricated grown CoSi2 growth chamber high conversion efficiency high temperature I-V curve In-situ doping interdiffusion interfaces laser converter laser power laser-energy converter lattice constant lattice mismatch low growth temperature low-resistivity MBE growth MBE techniques molecular beam epitaxy multilayer multiple junctions multiple p-n junctions Ohm-cm ohmic contacts optimized p-n junctions connected p-type Photovoltaic pinholes prolonged growth RBS spectrum refractive index Repeat step sample Sb concentration Sb doped series resistance sheet resistance shown in Fig silicide single p-n junction source temperatures SPE-CoSi2 SPE-grown CoSi2 stack structure substrate temperature thickness top surface vertical junctions vertical p-n junctions wafer wavelength