Progress in Semiconductor Materials V: Volume 891: Novel Materials and Electronic and Optoelectronic ApplicationsLinda J. Olafsen This book reviews the progress on interband and intersubband transitions in semiconductors, including III-V, IV and II-VI materials and quantum structures. Advances in the development of light sources, detectors, modulators, and electronic materials and devices are also explored. Brought to maturity, such devices will likely see widespread use in applications as diverse as infrared imaging, chemical and biological sensing, surveillance, short-links, space-based applications, solar cells, high-bandwidth communications, and many others. Topics include: infrared materials and devices; quantum dot structures and devices; progress in semiconductor materials - quantum dots, growth and magnetism; terahertz materials and devices; nitride materials for devices; nanostructured semiconductors and novel materials and devices; progress in semiconductors - dielectrics, silicon-, carbon- and nanomaterials; zinc oxide materials and devices including alloys; progress in semiconductor materials - ZnO and dilute nitrides; dilute nitride and bismide semiconductors; and advanced dielectrics and Si-based materials. |
Contents
High Aspect Ratio Etching of GaSbAlGaAsSb | 3 |
MidIR Interband Cascade Lasers | 27 |
Investigation of Surface Passivation in InAsGaSb | 37 |
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2006 Materials Research absorption AlGaN alloy annealing temperature Appl as-grown atoms band bandgap buffer layer carbon nanotubes cell chemical vapor deposition cm³ composition crystal decrease defects density devices diamond diodes dislocations doped effect electric electron emission emitting energy epilayer etch exciton experimental fabricated ferromagnetism films grown FWHM GaAs substrate GaInNAS GaSb growth temperature InAs increase InGaAs InGaP InSb interdiffused interface lattice lattice constant Lett magnetic Materials Research Society measurements mid-IR MOCVD molecular beam epitaxy nanotubes nitrogen observed obtained optical oxide oxygen p-type parameters photoluminescence photon Phys PL intensity PL peak PL spectra plasma Proc properties QD lasers quantum dots Raman ratio recombination room temperature sample sapphire semiconductor shown in Figure shows silicon SiO2 spectroscopy structure substrate surface Symp thermal thickness transition valence band voltage wafer wavelength Wavelength nm X-ray diffraction ZnO films