Materials Reliability in Microelectronics VI: Volume 428William F. Filter MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements. |
Contents
A Grand | 3 |
Oxidation Resistant Dilute Copper Boron Alloy Films | 17 |
Oxidation Resistance of Copper Alloy Thin Films Formed | 25 |
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Common terms and phrases
1/f noise activation energy Al-Cu AlCu alloy aluminum annealing anode Appl atoms bamboo barrier beam behavior bias Blech capacitors cathode centers charge concentration copper current density curvature damage decrease defects dependence depletion devices diffraction diffusion dislocation distribution effect electrical electromigration electromigration testing etch failure Figure films deposited flux formation gate oxide grain boundary grain growth growth hillock hole traps increase injection interconnect interface Joule heating layer length Lett MA/cm² material measurements mechanism metal lines microstructure MOSFET N₂O nitride nitrogen noise nucleation observed oxygen oxynitride parameters passivation Phys plasma plot polygranular segment precipitates Proc region reliability resistance changes sample shown in Fig shows Silane silicon SiO2 sputter deposited sputtering stress relaxation stripe substrate surface roughness Symp technique temperature tensile stress test structures texture thermal thickness thin films tunneling vacancy velocity void voltage wafer width x-ray