Proceedings of the Sixth International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications

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Sheng S. Li
The Electrochemical Society, 1999 - Science - 241 pages
 

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Page 93 - The research described in this paper was performed by the Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, and was...
Page 113 - Pb].xSnxTe, in which the energy gap can be controlled by varying x. It is well known that these low band gap materials are more difficult to grow and process than large band gap semiconductors such as GaAs.
Page 144 - Cardimona, the technical program manager, for his interest and support in this work. REFERENCES 1. BF Levine, J. Appl. Phys. 74, Rl (1993). 2. SD Gunapala and KMSV Bandara, Thin Films 21, 1 13 (1995).
Page 157 - Proceedings of the Third International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications III.
Page 87 - At temperatures > 70 K, temporal noise due to the QWIP's higher dark current becomes the limitation. As mentioned earlier, this higher dark current is due to thermionic emission and thus causes the charge storage capacitors of the readout circuitry to saturate.
Page 174 - Then the responsivity was calibrated using a blackbody test set, which is composed of a blackbody source (Mikron 305), preamplifier (EG&G PA-6), lock-in amplifier (EG&G 5209), and chopper system (Stanford Research System SR540). Responsivity measurements as a function of frequency showed that the thermal effect could be neglected at frequencies higher than 200 Hz.
Page 2 - FPAs are highly uniform and manufacturable, but they have very low quantum efficiency and can only operate in the MWIR range. The InSb FPA technology is mature with very high sensitivity, but it also can operate in the MWIR spectral range. Doped Si has a wide spectral range from 0.8 to 30 um and it can only operate at very low temperatures.
Page 10 - SD Gunapala, JS Park, G. Sarusi, TL Lin, JK Liu, PD Maker, RE Muller, CA Shott and T. Hoelter, 15-um 128x128 GaAs/A^Ga^As Quantum Well Infrared Photodetector Focal Plane Array Camera, IEEE Trans.
Page 114 - Highly uniform and pure crystal layers of such semiconductors can be grown on large substrate wafers [3,4], with control of each layer thickness down to a fraction of a molecular layer, using modern crystalgrowth methods like molecular beam epitaxy (MBE). Thus, by...
Page 115 - This is due to the fact that, when the excited state is placed in the continuum band above the barrier, the energy width associated with the state becomes wide. Spectral band width of these QWIPs can be further increased by...

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