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CZT pixel detectors equipped with effective Ohmic contacts their spectroscopic
Development of IMARAD CZT detectors with PIN contacts 376808
AuCdZnTeCdS min detectors fabricated by sputtering technique 376809
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active anode applications array band bias bismuth calculated carrier CdTe CdZnTe channel charge charge collection compared concentration Counts crystal curves defects dependence detector determined developed device drift effect efficiency electric field electrons emission energy resolution experimental Figure function FWHM gamma gamma-ray geometry grid height hole imaging IMARAD improved increase interaction irradiation Italy layer leakage current light lower material measurements method neutron noise nuclear observed obtained operation optical parameters peak performance photon Physics pixel position potential present produced properties pulse radiation range reduced region reported resistivity response sample scintillator semiconductor sensitivity shaping shown shows signal silicon single Space spectra spectroscopy spectrum standard strip structure surface technique temperature tested thickness trapping voltage volume X-ray