4 pages matching ionized impurity scattering in this book
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2DEG 3Ga 7As/GaAs MODFET 7As spacer layer 7As/GaAs MODFET structure Acetone anisotropic behavior bandgap Bead MasK Exposure buffer layer C-V measurements calculated characteristics exhibiting charge control analysis cm/sec conduction bands crystal direction crystal orientation Current gain cutoff frequency extrapolation D.C. characteristics D.I. water device performance device structures direction MODFET doping drift mobility analysis electric field electron average velocity electron group velocity electron mobilities electron sheet density electron velocity exhibiting a voltage Field Effect Transistor frequency and cutoff GaAs Buffer GaAs MESFET gate length gate MODFET Hall mobilities heterojunction high field higher electron increase ionized ionized impurity scattering Karl Suss Contact low field methanol minutes MODFET at 300K molecular beam epitaxy mS/mm n+-Al N2 blow dry neighboring devices NiKon Contact Aligner noise figure Ohmic Photoresist Spin quantum well MODFET region S-parameter silicon similar geometries spacer layer thicKness superlattice buffer Suss Contact Aligner threshold voltage transconductance undoped velocity enhancement voltage shift