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GENERAL INTRODUCTION page
CONTROLLED CONDUCTIVITY IN LEAD SULPHIDE
5 other sections not shown
activation energy anion vacancies band scheme Bi3+ Boomgaard calculated charge carriers compound semiconductors Concentrations of electrons conduction band controlled valency cooling process corresponding denotes deviations effective charge effective mass electro-neutrality condition electron or hole electrons and holes empty band empty level energy gap equations equilibrium constants Fermi level filled band foreign ions free electrons function germanium gives Hall effect heating temperature hole concentrations impurity increasing with PPb influence Kroger kRPPb lead pressure level lies log PPb low sulphur pressures lower masses of electrons mp/m n-type crystals neutrality condition obtained p-type conductivity p/n equivalence atmosphere p/n equivalence point partial pressure Pb2+ PbS crystals PbS-Ag PbS-Bi Phys position possible pure PbS range of controlled region reheated room temperature Schottky constant Smolczyk stoichiometric thermal equilibrium thermo-emf transition atmosphere undoped PbS valence band vapour various sulphur pressures Vc centre Vc level Vink width