Proceedings of the ... European Conference on Chemical Vapor DepositionEditions de physique, 1993 - Vapor-plating |
Contents
modelling aspects C33 | 3 |
H ROUCH M PONS A BENEZECH J N BARBIER C BERNARD and R MADAR | 17 |
O YU GORBENKO W DECKER and G WAHL Investigation of the kinetics | 25 |
Copyright | |
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adsorption aluminium analysis août Appl atoms Auger bonds boron calculated carbide carbon carbon fibers chemical vapor deposition coatings coefficient Colloque C3 composition concentration CVD process decomposition decrease deposition rate deposition temperature diffusion disilane Electrochem electron energy epitaxial equation etching experimental Figure film thickness films deposited flow rate function gas flow gas phase gaseous growth rate H₂ heat hydrogen increase Journal de Physique kinetic laser layer LCVD LPCVD mass mbar measured MOCVD morphology nitride nitrogen observed obtained oxidation oxygen parameters partial pressure peak Phys plasma polysilicon pore precursors pyrolysis ratio reaction reactor refractive index resistance samples scanning sccm shows SiH2 SiH4 silane silicon silicon nitride silylene SiO2 species spectra sticking coefficient structure substrate substrate temperature supplément au Journal surface thermal thermodynamic thin films titanium TMAA Torr total pressure values wafer X-ray diffraction