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BASIC MESFET OPERATING PRINCIPLES
EXPERIMENTAL SETUP AND CAD LAYOUT
6 other sections not shown
100 micron gate 522 ONE KEY active channel doping active channel layer active layer airbridge capacitance channel layer thickness Channel Level CHIP ALIGN de-ionized water rinse depletion region device drain breakdown voltage Drain current versus drain saturation current drain side drift velocity electric field Experimental data FIGURE TITLE flip-chip function of active function of frequency function of gate function of source GaAs MESFET GALLIUM ARSENIDE gate and drain gate drain breakdown gate metal gate recess gate spacing gate transistors gate-drain breakdown voltage inductance Layout light emission lithography LOR 2 E1 Maximum available gain Maximum stable gain measured source drain mesa micron gate length micron gate width ohmic contact Ohmic Level output power power transistors S-parameters single gate transistors source drain saturation source interconnect source pad source-drain saturation current submicron substrate current substrate thickness theoretical curve thermal impedance thick channel model thin channel approximation total gate width transconductance VGDB