A Study of Breakdown Voltage for Gallium Arsenide Power Transistors with Gatelengths in the Submicron Range |
From inside the book
Results 1-3 of 7
Page 118
Carolyn Ming Lowe. PIP TT : = DL1 : MBCHIPU.JOB ONE LOR 2 E1 01 .761 522 LOR 4 E1 01 .761 522 " ONE KEY 3 MVR E1 01 ONE LOR 2 E1 01 .761 .522 PIP TT : = DL1 BBCHIPU.JOB ONE LOR 2 E1 01 .761 .522 LOR 4 E1 01 .761 522 + ONE KEY 3 MVR E1 01 ...
Carolyn Ming Lowe. PIP TT : = DL1 : MBCHIPU.JOB ONE LOR 2 E1 01 .761 522 LOR 4 E1 01 .761 522 " ONE KEY 3 MVR E1 01 ONE LOR 2 E1 01 .761 .522 PIP TT : = DL1 BBCHIPU.JOB ONE LOR 2 E1 01 .761 .522 LOR 4 E1 01 .761 522 + ONE KEY 3 MVR E1 01 ...
Page 119
... LOR 2 E1 01 .761 522 ONE LOR 2 E1 01 .761 522 ↑ LOR 4 E1 01 .761 · 522 ONE KEY 3 LOR 4 E1 01 .761 522 • ONE KEY 3 MVR E1 01 ONE LOR 2 E1 01 .761 .522 LOR 4 E1 01 ONE KEY 3 .761 .522 MVR E1 01 ONE LOR 2 E1 01 .761 .522 LOR 4 E1 01 ONE ...
... LOR 2 E1 01 .761 522 ONE LOR 2 E1 01 .761 522 ↑ LOR 4 E1 01 .761 · 522 ONE KEY 3 LOR 4 E1 01 .761 522 • ONE KEY 3 MVR E1 01 ONE LOR 2 E1 01 .761 .522 LOR 4 E1 01 ONE KEY 3 .761 .522 MVR E1 01 ONE LOR 2 E1 01 .761 .522 LOR 4 E1 01 ONE ...
Page 123
... LOR 2. P [ P > \\ TT : = DL1 : ACHIP6 , JOB PIF TT : = DL1¦ AAHIF6 , JOB ONE LOR 2 E1 01 .502 .522 LOR 4 E1 01 .502 522 ONE KEY 3 MUR E1 01 ONE LOR 2 E1 01 .502 .522 LOR 4 E1 01 .502 522 ONE KEY 3 MSU EJ 01 TPO 01 4 PEADY TO EXPOSURE ...
... LOR 2. P [ P > \\ TT : = DL1 : ACHIP6 , JOB PIF TT : = DL1¦ AAHIF6 , JOB ONE LOR 2 E1 01 .502 .522 LOR 4 E1 01 .502 522 ONE KEY 3 MUR E1 01 ONE LOR 2 E1 01 .502 .522 LOR 4 E1 01 .502 522 ONE KEY 3 MSU EJ 01 TPO 01 4 PEADY TO EXPOSURE ...
Common terms and phrases
01 RMP WAF 100 micron gate active channel doping active channel layer active layer airbridge capacitance channel layer thickness Channel Level CHIP ALIGN current active channel de-ionized water rinse decreasing gate length depletion region drain breakdown voltage drain saturation current drift velocity e-beam electric field etch Experimental data function of active function of frequency function of source GaAs MESFET GALLIUM ARSENIDE gate drain breakdown gate finger gate metal gate recess gate transistors gate-drain breakdown voltage Ladbrooke's thick channel Layout light emission LOR 2 E1 Maximum available gain measured source drain mesa micron gate length micron gate width MVR E1 ohmic contact Ohmic Level output power parameters power transistors resist RMP WAF E1 S-parameters saturation current active source drain saturation source interconnect source pad submicron substrate current theoretical curve thermal impedance thick channel approximation thick channel model total gate width transconductance VGDB Wafer Alignment