Materials Modification and Synthesis by Ion Beam Processing: Symposium Held December 2-5, 1996, Boston, Massachusetts, U.S.A. |
Contents
TransientEnhanced Diffusion of Dopants in Preamorphized | 3 |
Effect of Energy and Dose on TransientEnhanced Diffusion | 21 |
Modeling of Dislocation Loop Growth and Transient Enhanced | 27 |
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1997 Materials Research absorption amorphous annealing temperature Appl as-implanted atoms bombardment bonds boron carbon chemical clusters cm² CO₂ coating coefficient colloids concentration contact angle crystalline damage decrease defects deposition depth profile diffraction diffusion DLC films dopant doping effect electron EPDM rubber epitaxial experimental Figure fluence formation friction function hydrogen implanted samples increase intensity interface interstitial ion beam ion beam deposition ion dose ion energy ion implantation ion irradiation ions/cm² irradiation kinetic energy laser layer LDPE Lett Materials Research Society measured metal nanoindentation nitride nitrogen nonlinear Nucl observed optical oxide oxygen peak Phys plasma polymer Proc properties pulse range region room temperature samples implanted semiconductor shown in Fig shows silica silicon simulation SiO2 spectra spectroscopy sputtering stoichiometric structure substrate surface surface plasmon resonance Symp technique thermal thickness values voltage wafers wavelength Young's modulus