Analysis of Microelectronic Materials and DevicesPresents a comprehensive survey of analytical techniques currently used in support of all stages of microelectronic materials and device processing. The diversity of topics covered has been achieved by bringing together an international field of authors contributing specialized chapters. |
Contents
Contributors | ix |
Prologue | xv |
List of Major Abbreviations and Acronyms | xliii |
Copyright | |
24 other sections not shown
Other editions - View all
Analysis of Microelectronic Materials and Devices M. Grasserbauer,H. W. Werner No preview available - 1995 |
Common terms and phrases
absorption activation analysis angle Appl applications atoms Auger band beam chemical composition concentration contamination contrast corresponding crystal depends depth depth profiling detection detector determined devices diffraction direction effect electrical electron electron beam elements energy equation example experimental factor field Figure function GaAs give given important impurities incident increase intensity interface laser lateral layer light limit mass material measured metal method Microelectronic microscopy observed obtained optical oxide oxygen parameters particles pattern peaks performed photoelectron Phys position possible present problem produced Raman Raman spectroscopy range ratio reactions recorded reference reflection region relative resolution sample scanning scattering secondary semiconductor sensitivity shown shows signal silicon SIMS solid specimen spectra spectrometer spectroscopy spectrum sputtering structure substrate surface technique thickness thin tion typical voltage wafer X-ray yield
References to this book
Process Analytical Chemistry: Control, Optimization, Quality, Economy Karl H. Koch Limited preview - 1999 |