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Roadmap of semiconductor infrared lasers and detectors for the 21st century 3629100
INFRARED DETECTORS AND MATERIALS I
Influence of the caxis orientation on the optical properties of thin Cds thin films formed
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absorption achieved active Appl applications arrays band bias calculated carrier characteristics compared composition concentration corresponding crystals curve dark current demonstrated density dependence deposition detection detectors determined device diode dislocation doping effect electric electron energy epitaxial experimental fabricated field Figure frequency function GaAs gain grown growth HgCdTe higher hole imaging improve increase infrared ionization laser layer Lett levels lifetime light limited lower material measured missile n-type noise normal observed obtained operation optical peak performance photodetectors photodiodes photons Phys properties quantum quantum efficiency QWIP radiation range region relatively reported responsivity samples Schottky semiconductor shown in Figure shows single solar spectral SPIE strain structure substrate superlattice surface temperature thermal thickness transition voltage wavelength