Photodetectors: Materials and Devices, Volume 4; Volume 3629SPIE, 1999 - Infrared detectors |
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Contents
Roadmap of semiconductor infrared lasers and detectors for the 21st century 3629100 | 2 |
INFRARED DETECTORS AND MATERIALS I | 41 |
Influence of the caxis orientation on the optical properties of thin Cds thin films formed | 47 |
Copyright | |
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Common terms and phrases
absorption achieved active Appl applications arrays band bias calculated carrier characteristics compared composition concentration corresponding crystals curve dark current demonstrated density dependence deposition detection detectors determined device diode dislocation doping effect electric electron energy epitaxial experimental fabricated field Figure frequency function GaAs gain grown growth HgCdTe higher hole imaging improve increase infrared ionization laser layer Lett levels lifetime light limited lower material measured missile n-type noise normal observed obtained operation optical peak performance photodetectors photodiodes photons Phys properties quantum quantum efficiency QWIP radiation range region relatively reported responsivity samples Schottky semiconductor shown in Figure shows single solar spectral SPIE strain structure substrate superlattice surface temperature thermal thickness transition voltage wavelength
Bibliographic information
| Title | Photodetectors: Materials and Devices, Volume 4; Volume 3629 Volume 2685; Volume 2999; Volume 3287; Volume 3629; Volume 3948 of Proceedings of SPIE--the International Society for Optical Engineering |
| Contributors | Society of Photo-optical Instrumentation Engineers, United States. Defense Advanced Research Projects Agency |
| Publisher | SPIE, 1999 |
| ISBN | 0819430994, 9780819430991 |
| Export Citation | BiBTeX EndNote RefMan |