Analysis and design of analog integrated circuits
This edition combines the consideration of metal-oxide-semiconductors (MOS) and bipolar circuits into a unified treatment that also includes MOS-bipolar connections made possible by BiCMOS technology. Contains extensive use of SPICE, especially as an integral part of many examples in the problem sets as a more accurate check on hand calculations and as a tool to examine complex circuit behavior beyond the scope of hand analysis. Concerned largely with the design of integrated circuits, a considerable amount of material is also included on applications.
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BIPOLAR MOS AND BiCMOS INTEGRATEDCIRCUIT
SINGLETRANSISTOR AND TWOTRANSISTOR
TRANSISTOR CURRENT SOURCES AND ACTIVE LOADS
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analysis applied approximately Assume bandwidth base current base-emitter basic amplifier bias current bipolar transistor breakdown voltage calculated capacitance capacitor cascode channel Chapter circuit of Fig CMOS collector current collector-base common-base common-emitter common-mode configuration current gain current source depletion region device differential diffusion diode dominant pole doping drain effect emitter follower emitter-coupled pair Equation equivalent input noise example feedback amplifier feedback network Figure flicker noise forward-active region frequency response gives impurity input offset voltage input resistance input stage input voltage integrated circuits integrated-circuit JFET junction layer loop gain low-frequency magnitude mismatch MOSFET negative neglected npn transistor operational amplifier output current output resistance output stage output voltage p-type parameters power dissipation resistor root locus saturation shown in Fig signal silicon sinusoidal small-signal equivalent circuit substrate temperature transconductance transfer characteristic transfer function typical voltage gain zero