What people are saying - Write a review
We haven't found any reviews in the usual places.
The forces on electrons and holes
1 other sections not shown
abrupt activation and mobility AIGaAs Ankri anneal temperature annealed MEE layer Appl atoms Auger profile band gap Bijan Tadayon Calawa cell conduction band conventional MBE method Cornell University crystal quality dopant doping method electrical activation electron concentration emitter ENHANCED EPITAXY METHOD epilayer equation Figure GaAs at low GaAs-AI-GaAs structure growth chamber growth method growth of GaAs growth of GaAs-AI-GaAs growth rate method Harris HBT expert HETEROJUNCTION BIPOLAR TRANSISTOR hole concentration hole sheet density Horikoshi Howard University InGaAs interdiffusion Kawashima L. F. Eastman layer at 900 layers were grown low growth rate low substrate temperatures MBE growth MEE method MIGRATION ENHANCED EPITAXY mobility and hole Molecular Beam Epitaxy novel method P. M. Asbeck peak phonon photoluminescence photoluminescence PL Phys PL spectra quality GaAs Raman spectroscopy Raman spectrum Rathbun reduce RHEED Saied Tadayon shutters sticking coefficient surface diffusion length surface morphology thesis undoped GaAs valence band