Cleaning Technology in Semiconductor Device Manufacturing ...: Proceedings of the International SymposiumElectrochemical Society, 2002 - Semiconductor wafers |
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Contents
SINGLEWAFER SPIN CLEANING WITH REPETITIVE | 3 |
EVALUATION OF NEW MEGASONIC SYSTEM FOR SINGLE | 15 |
ADVANCED SINGLE CHEMISTRY ALKALINE CLEANING | 23 |
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4 other sections not shown
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Common terms and phrases
acid added addition adsorption agents amount bath calculated carbon charge chemical chemistries cleaning cleaning process compared complexing concentration constant contamination conventional copper decreased defects dependence deposition device dielectric dilute HF effect Electrochem etch rate EXPERIMENTAL experiments Figure film force function gate groups growth HF solution higher important improved impurities increased indicated integration ions layer liquid lower manufacturing materials measured mechanism megasonic metal metal contamination native oxide observed obtained organic organic contaminants oxygen ozone particle removal efficiency performed potential present production reaction reduced residue resistance rinse sample Semiconductor shown shows silicon oxide silicon surface silicon wafers silver single SiO2 solution species standard step strip Table Technology temperature thermal thickness tool treatment values various wafer surface
Bibliographic information
| Title | Cleaning Technology in Semiconductor Device Manufacturing ...: Proceedings of the International Symposium Proceedings (Electrochemical Society) |
| Contributor | Electrochemical Society. Dielectric Science and Technology Division |
| Publisher | Electrochemical Society, 2002 |
| Original from | the University of Michigan |
| Digitized | Dec 10, 2007 |
| ISBN | 1566773598, 9781566773591 |
| Export Citation | BiBTeX EndNote RefMan |