Chemical-Mechanical Polishing - Fundamentals and Challenges: Volume 566

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S. V. Babu, S. Danyluk, M. Krishnan, M. Tsujimura
Cambridge University Press, Feb 10, 2000 - Technology & Engineering - 281 pages
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Chemical-mechanical planarization (CMP) has emerged over the past few years as a key enabling technology in the relentless drive of the semiconductor industry towards smaller, faster and less expensive interconnects. However, there are still many gaps in the fundamental understanding of the overall CMP process and the associated defect and contamination issues. This book brings together many of the active players in the field to focus on the interdisciplinary nature of these challenges. It reflects, to some extent, the role played by both academic institutions and multinational corporations in opening up the frontiers in the field of CMP for wider dissemination. Both experimental and theoretical contributions are included. Topics include: overview and oxide polishing; pads and related issues; metal polishing - W and Al; copper polishing and related issues; CMP modeling and fluid flow; and particle adhesion and post-polish cleaning.

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Contents

The Influence of pH and Temperature on Polish Rates
13
The Study of Oxide Planarization Using a Grindstone
19
Abrasive Effects in Oxide ChemicalMechanical Polishing
27
Copyright

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