Chemical-Mechanical Polishing - Fundamentals and Challenges: Volume 566
S. V. Babu, S. Danyluk, M. Krishnan, M. Tsujimura
Cambridge University Press, Feb 10, 2000 - Technology & Engineering - 281 pages
Chemical-mechanical planarization (CMP) has emerged over the past few years as a key enabling technology in the relentless drive of the semiconductor industry towards smaller, faster and less expensive interconnects. However, there are still many gaps in the fundamental understanding of the overall CMP process and the associated defect and contamination issues. This book brings together many of the active players in the field to focus on the interdisciplinary nature of these challenges. It reflects, to some extent, the role played by both academic institutions and multinational corporations in opening up the frontiers in the field of CMP for wider dissemination. Both experimental and theoretical contributions are included. Topics include: overview and oxide polishing; pads and related issues; metal polishing - W and Al; copper polishing and related issues; CMP modeling and fluid flow; and particle adhesion and post-polish cleaning.
What people are saying - Write a review
We haven't found any reviews in the usual places.
The Influence of pH and Temperature on Polish Rates
The Study of Oxide Planarization Using a Grindstone
Abrasive Effects in Oxide ChemicalMechanical Polishing
36 other sections not shown
abrasive achieved active addition applied calculated carrier chemical cleaning CMP process compared concentration copper corrosion decreases defects dependence deposition determined device discussed dissolution effect electrochemical endpoint equation erosion etch experimental experiments Figure film thickness force function hardness higher increase indicates integrated interaction layer length lines load lower Materials measured mechanical metal nitride normal observed obtained oxide parameters particles passive pattern density performance peroxide planarization polish rate potential present pressure Proc range reduced reference regions relative remaining removal rate Research ring samples scale scan selectivity shown in Figure shows silica silicon slurry Society solution speed stage step height stress structure subpad substrate surface Table Technology temperature trench tungsten uniformity unit values variation various Volume wafer wafer surface