Annual Symposium on Photomask Technology and Management: Proceedings, Volume 12; Volume 1809SPIE--the International Society for Optical Engineering, 1993 - Integrated circuits |
Contents
Performance and perspective of the newly developed highaccuracy maskmaking | 14 |
Performance data from the EBES4 highspeed reticle generator 180903 | 29 |
Rational argument for the impracticability of 1x reticles 180904 | 39 |
Copyright | |
6 other sections not shown
Other editions - View all
Common terms and phrases
5X reticle aerial image alignment accuracy Bessel beam calibration CD uniformity chrome defects chrome etch coherence conductive polymers contact hole curves defocus diffraction dimension dose DRAM dry etch EBES4 empowerment error etch depth etch process Etec evaluate exposure focus Fourier Hitachi i-line improvement inspection Integrated Circuit Intel Corporation intensity ion beam milled laser layer Line Width Linearity lithography mask manufacturing measurement MEBES metrology tool micron monitor optical Overlay parameters Pareto chart particles pattern pellicle performance phase shift phase-shift mask photomask photoresist pinhole defect plate plot Pockels cell precision printability printed process window PSL spheres Q-switch quartz refractive index resist thickness rim shifter rim width sample Scan scatter sensitivity shift mask shown in figure shows Si-resist simulation specifications SPIE stepper substrate technique twin phase edge variation wafer wavelength wet etch writing x-ray mask yield loss