How to Design Circuits Using Semiconductors |
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Page 34
... Negative resistance in the region between I and I , is quite important when the tunnel diode is to be used as an oscillator . Like the other parameters , negative resistance varies with the material used to construct the diode as well ...
... Negative resistance in the region between I and I , is quite important when the tunnel diode is to be used as an oscillator . Like the other parameters , negative resistance varies with the material used to construct the diode as well ...
Page 36
... negative resistance region and is connected to an L - C resonant tank circuit . The negative resistance cancels a portion of the positive resistance inherent in tank circuits . The noise generated by the diode should be low . It is ...
... negative resistance region and is connected to an L - C resonant tank circuit . The negative resistance cancels a portion of the positive resistance inherent in tank circuits . The noise generated by the diode should be low . It is ...
Page 86
... negative or positive bias can be applied , negative bias is usually employed when using depletion - type IGFETs . Two methods of achieving negative bias are shown in Fig . 3-12 . In Fig . 3-12A , the gate is made negative by virtue of ...
... negative or positive bias can be applied , negative bias is usually employed when using depletion - type IGFETs . Two methods of achieving negative bias are shown in Fig . 3-12 . In Fig . 3-12A , the gate is made negative by virtue of ...
Contents
Transistors | 42 |
Biasing Transistors | 71 |
Audio Voltage Amplifiers | 95 |
Copyright | |
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Common terms and phrases
ABCD ac load amplifier amps applied axis base circuit base current base-emitter junction beta bias circuit binary number breakdown voltage capacitor characteristics circuit in Fig class-AB clock pulse collector current column common-emitter conduct connected converter current flowing cycle dc load line decimal determined device digit drain current emitter current emitter resistor equal equation equivalent circuit factors fed back feedback filter forward-biased gate h-parameters IGFET increases inductor input impedance input signal input voltage J-K flip-flop JFET Karnaugh map leakage current load line load resistor logic circuit maximum multiplied negative negative resistance noise ohms op amp operation oscillator output voltage parallel parameters photoresistor power dissipated Q outputs quiescent R₁ ratio reset resistance resistor reverse biased saturation semiconductor shown in Fig shunt supply voltage switching temperature terminal thermistor transconductance triac truth table V₁ voltage gain volts Vout zener diode zero