64- to 256-megabit Reticle Generation: Technology Requirements and ApproachesGregory K. Hearn |
Contents
Conference Committee | 47 |
the role of the maskmaking industry | 53 |
emphasis on mask design and specification | 61 |
Copyright | |
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Common terms and phrases
64MDRAM accuracy BACUS beam CD control chemical chip chrome Cleaning and Pelliclization cost critical dimension data handling deep UV defect inspection Device Overlay DRAM dry etching e-beam electron equipment error budget etch process excimer laser feature film firms focus future hard defect Hitachi illumination improved increased industry integrated circuits Intel layer lens lenses Levenson linewidth variation lithography system mask makers maskmaking measurement metrology metrology systems metrology tool Microelectronics Seminar Microlithography minimum optical lithography optical proximity optical proximity correction overlay error patent applications pattern performance phase shift mask phase-shifting Photolithography photomask photoresist pixel print field Prisoner's Dilemma problems Proc production projection proximity effect reduced registration resist process resolution reticle manufacturing reticle specifications Roadmap scan Sematech semiconductor soft defect SPIE substrate techniques Terasawa thin film interference throughput typically wafer stepper wavelength