Optical Microlithography VI: 4-5 March 1987, Santa Clara, California |
Contents
Volume | 2 |
Optical Systems and Subsystems | 41 |
Practical considerations of submicron photolithography M Nuhn S K Yao T Johnson American | 48 |
Copyright | |
9 other sections not shown
Common terms and phrases
aberrations aerial image alignment marks alignment system astigmatism autofocus bias calculated Calma chip chrome coma component contact hole contours contrast coverplate dark field defocus depth of focus design rules device dimensions distortion Dry Etched e-beam edge Effective Defect Capture etchrate experimental exposure feature film filter g-line geometries glass wafers grating helium hexode i-line illumination inspection intensity laser layer lens lenses linewidth machine magnification manufacturing mask measured Microlithography micron nominal Number of Points numerical aperture optical lithography Optical Microlithography overlay errors oxide parameters pattern performance photomask photoresist position production proximity effect resist image resist process resist thickness resolution reticle scanning shown in Figure shows Sigma silicon simulation SPIE structures submicron surface technique temperature tolerance intervals tungsten silicide variability variation wafer flatness wafer mark wafer stepper wavelength Wet Etched width X-AXIS yield Zeiss zero