Contents
1 | 1 |
a Density of rutile single crystals | 12 |
Fcenter resonance in | 26 |
5 other sections not shown
Common terms and phrases
absorption addition analysis appears applied approximately assumed band behavior Bismuth carriers charge coefficient complete component Computer concentration considered constant crystals density dependence described determined developed device dielectric direction doping effect efficiency electric electron elements energy equations experimental expression field film frequency function given gives Group Hall heat impurity increase indicate Laboratory lattice lead limit liquid magnetic masks material maximum measurements mechanism melting method mobility observed obtained operation optical optimum oxide parameters performance phase Phys positive possible preparation present problem Progress properties range References Report Research resistance sample scattering semiconductors shown in Fig shows single solid solution specimen structure technique telluride tellurium temperature Theorem theory thermal conductivity thermoelectric thermoelectric power thin tube unit vacuum variation varies