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H Gnaser Univ Kaiserslautern Germany
Kinetic scaling of fractal growth of thin films 408605
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absorption amorphous analysis annealing Appl Applications atoms band beam calculated carrier characteristics China coating composition concentration constant corresponding crystal curve decrease defects density dependence deposition determined device dielectric diffraction direction DISCUSSION doped effect efficiency electrical electron emission energy epitaxial erbium etching excitation experimental experiments fabricated field Figure frequency function GaAs grown growth higher increasing indicates Institute intensity interface International laser layer Lett light magnetic materials measured method mode observed obtained optical oxide oxygen parameters pattern peak performed phase Phys Physics polarization prepared pressure properties quantum range ratio reflection refractive region reported respectively room temperature sample Science semiconductor Shanghai shown shows silicon single solid solution spectra spectrum sputtering structure substrate surface technique temperature thermal thickness thin films transition voltage wavelength X-ray