Charge-coupled Devices and Solid State Optical Sensors, Volume 1900SPIE, 1993 - Charge coupled devices |
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Page 111
... COLUMN ROW The collected charge is sensed , not coupled out as in CCD's , the charge can be sensed ( read ) many ... column potential greater than the row . This is necessary so that the column collects all of the photon generated charge ...
... COLUMN ROW The collected charge is sensed , not coupled out as in CCD's , the charge can be sensed ( read ) many ... column potential greater than the row . This is necessary so that the column collects all of the photon generated charge ...
Page 113
... column are common through a polysilicon run connected to the column multiplexer , which is controlled by the horizontal shift register . The multiplexers are utilized to set pixels to integration , injection or skimming bias levels ...
... column are common through a polysilicon run connected to the column multiplexer , which is controlled by the horizontal shift register . The multiplexers are utilized to set pixels to integration , injection or skimming bias levels ...
Page 174
Preamplifier - per - column ( PPC ) possesses an architecture similar to PPR except that preamplifiers are mounted at the ends of each column , and readout is performed from the column rather than row electrodes . It offers the most ...
Preamplifier - per - column ( PPC ) possesses an architecture similar to PPR except that preamplifiers are mounted at the ends of each column , and readout is performed from the column rather than row electrodes . It offers the most ...
Contents
a feasibility study 190002 | 15 |
Smart optical and image sensors fabricated with industrial CMOSCCD semiconductor | 21 |
Design of a lowlightlevel image sensor with onchip sigmadelta analogtodigital conversion | 31 |
Copyright | |
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A/D converter achieve active pixel active pixel sensor antiblooming applications APS technology architecture array backside Blouke Bragg peak buried channel calculated camera capacitance capacitors CCD image sensor centroid charge transfer efficiency charge-coupled device circuit clock CMOS CMOS process coating column crosstalk DALSA damage dark current detector device dewar dynamic range EDTV electrons fabricated focal plane frame rate function gate horizontal IEEE Trans illuminated image sensor increase input integration Janesick kTC noise layer linear measured mode MOSFET on-chip operation optical output amplifier oxide parallel parameters peak performance photodiode photon poly potential Proc quantum efficiency radiation read noise readout rate reduced region reset resolution SDTV sensitivity serial shift register sigma-delta modulator signal charge spectral SPIE Vol substrate surface Tektronix temperature thinned CCD transistor UV flooding vertical voltage wavelength X-Ray Microscopy