Annual Symposium on Photomask Technology and Management: Proceedings, Volume 16; Volume 2884SPIE--the International Society for Optical Engineering, 1996 - Integrated circuits |
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Page 266
... layer must be at least 2.77 μm thick to provide a sufficient heat diffusion . For our work , a 3 μm thick layer of aluminum was used . = Aluminum Mask Fabrication The most important advantage of the aluminum mask is that the fabrication ...
... layer must be at least 2.77 μm thick to provide a sufficient heat diffusion . For our work , a 3 μm thick layer of aluminum was used . = Aluminum Mask Fabrication The most important advantage of the aluminum mask is that the fabrication ...
Page 267
... layer . This etching process is not very selective since most materials are etched at approximately the same rate . This requires that the resist layer be thicker than the aluminum layer in order to ensure an adequate margin for ...
... layer . This etching process is not very selective since most materials are etched at approximately the same rate . This requires that the resist layer be thicker than the aluminum layer in order to ensure an adequate margin for ...
Page 456
... layer of electron - beam resist ( ZEP - 520 ) for lithography . The alignment marks were placed on the polysilicon layer and near the device module which are first patterned by stepper and etched in the polysilicon etcher during the ...
... layer of electron - beam resist ( ZEP - 520 ) for lithography . The alignment marks were placed on the polysilicon layer and near the device module which are first patterned by stepper and etched in the polysilicon etcher during the ...
Contents
Investigation of multiphase printing writing modes on mask performance in MEBES 4500 | 8 |
Mask inspection and realtime linewidth measurements 288415 | 15 |
Detectability and printability of programmed defects in the contact layer for 256MbDRAM | 58 |
Copyright | |
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Common terms and phrases
ablation aerial image alignment alternating PSM baking bias CD linearity CD measurement CD uniformity cell chrome clear defect coating thickness contact hole corner rounding critical dimension defect printability density design rule developed deviation device DRAM dry etching e-beam edge roughness electron beam lithography etch process etch rate Etec Systems evaluation excimer laser fabrication feature film focus hole pattern fidelity hybrid PSM i-line ICP power improved layer linewidth Lucent Technologies manufacturing MEBES method metrology nm thick normal opaque defect optical proximity correction optimal overetch parameters participants pattern edge pellicle performance phase shift phase-shift mask photomask Photronics pinhole pixel plate polysilicon pre-baking process window proximity correction proximity effect repaired area resolution RETICLE DEFECT sample sensitivity shifter shown in Figure shows simulation specification Spot stepper substrate Table target technique temperature tool transmission uC/cm² wafer wavelength wet etching μη